Part Number Hot Search : 
2SC4203 FCR0320 153031 AD8036 LCP114E CLM7660 CDB4390 30007
Product Description
Full Text Search
 

To Download TSM13N50CIC0 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 Preliminary TSM13N50 500V N-Channel Power MOSFET
TO-220 ITO-220
Pin Definition: 1. Gate 2. Drain 3. Source
PRODUCT SUMMARY VDS (V)
500
RDS(on)()
0.48 @ VGS =10V
ID (A)
6.5
General Description
The TSM13N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Features
Low RDS(ON) 0.48 (Max.) Low gate charge typical @ 36nC (Typ.) Low Crss typical @ 23pF (Typ.) Fast Switching
Block Diagram
Ordering Information
Part No.
TSM13N50CZ C0 TSM13N50CI C0
Package
TO-220 ITO-220
Packing
50pcs / Tube 50pcs / Tube N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current * Avalanche Current (Single) (Note 2) Single Pulse Avalanche Energy (Note 2) Avalanche Current (Repetitive) (Note 1) Repetitive Avalanche Energy (Note 1) Maximum Power Dissipation @Ta = 25 C Operating Junction Temperature Storage Temperature Range * Limited by maximum junction temperature
o
Symbol
VDS VGS ID IDM IAS EAS IAR EAR PD TJ TSTG
Limit
500 30 13 52 13 751 13 19.5 40 150 -55 to +150
Unit
V V A A A mJ A mJ W C
o
C
1/7
Version: Preliminary
Preliminary TSM13N50 500V N-Channel Power MOSFET
Thermal Performance
Parameter
Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient Notes: Surface mounted on FR4 board t 10sec TO-220 ITO-220
Symbol
RJC RJA
Limit
1.92 3.12 62.5
Unit
o o o
C/W C/W C/W
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Diode Forward Voltage Dynamic
b
Conditions
VGS = 0V, ID = 250uA VGS = 10V, ID = 6.5A VDS = VGS, ID = 250uA VDS = 500V, VGS = 0V VGS = 30V, VDS = 0V VDS = 10V, ID = 6.5A IS = 12A, VGS = 0V
Symbol
BVDSS RDS(ON) VGS(TH) IDSS IGSS gfs VSD Qg Qgs Qgd Ciss Coss Crss td(on)
Min
500 -2.0 -----------------
Typ
-0.4 ---15 -36 8.3 9.8 1960 190 23 25 100 130 100 410 4.5
Max
-0.48 4.0 1 100 -1.4 45 --2450 237 29 -------
Unit
V V uA nA S V
Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching
c
VDS = 400V, ID = 13A, VGS = 10V VDS = 25V, VGS = 0V, f = 1.0MHz
nC
pF
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time VGS = 0V, IS = 13A, VGS = 10V, ID = 13A, VDD = 300V, RG = 25
tr td(off) tf tfr
nS
nS uC
dIF/dt = 100A/us Reverse Recovery Charge Qfr Notes: 1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. VDD = 50V, IAS=13A, L=8mH, RG=25 3. Pulse test: pulse width 300uS, duty cycle 2% 4. Essentially Independent of Operating Temperature 5. For design reference only, not subject to production testing. 6. Switching time is essentially independent of operating temperature.
2/7
Version: Preliminary
Preliminary TSM13N50 500V N-Channel Power MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveform
EAS Test Circuit & Waveform
3/7
Version: Preliminary
Preliminary TSM13N50 500V N-Channel Power MOSFET
Diode Reverse Recovery Time Test Circuit & Waveform
4/7
Version: Preliminary
Preliminary TSM13N50 500V N-Channel Power MOSFET
TO-220 Mechanical Drawing
DIM A B C D E F G H J K L M N O P
TO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.000 10.500 0.394 0.413 3.740 3.910 0.147 0.154 2.440 2.940 0.096 0.116 6.350 0.250 0.381 1.106 0.015 0.040 2.345 2.715 0.092 0.058 4.690 5.430 0.092 0.107 12.700 14.732 0.500 0.581 14.224 16.510 0.560 0.650 3.556 4.826 0.140 0.190 0.508 1.397 0.020 0.055 27.700 29.620 1.060 1.230 2.032 2.921 0.080 0.115 0.255 0.610 0.010 0.024 5.842 6.858 0.230 0.270
5/7
Version: Preliminary
Preliminary TSM13N50 500V N-Channel Power MOSFET ITO-220 Mechanical Drawing
DIM A B C D E F G H I J K L M N O
ITO-220 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 10.04 10.07 0.395 0.396 6.20 (typ.) 0.244 (typ.) 2.20 (typ.) 0.087 (typ.) 1.40 (typ.) 0.055 (typ.) 15.0 15.20 0.591 0.598 0.52 0.54 0.020 0.021 2.35 2.73 0.093 0.107 13.50 13.55 0.531 0.533 1.11 1.49 0.044 0.058 2.60 2.80 0.102 0.110 4.49 4.50 0.176 0.177 1.15 (typ.) 0.045 (typ.) 3.03 3.05 0.119 0.120 2.60 2.80 0.102 0.110 6.55 6.65 0.258 0.262
6/7
Version: Preliminary
Preliminary TSM13N50 500V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale.
7/7
Version: Preliminary


▲Up To Search▲   

 
Price & Availability of TSM13N50CIC0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X